JAN1N5417/TR
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likeJAN1N5417/TR
Brand：Microchip
Model：JAN1N5417/TR
stock：53176
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥8.35
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | TR |
| series | Military, MIL-PRF-19500/411 |
| Part status | On sale |
| Speed | Rapid recovery=< 500ns,> 200mA(Io) |
| working temperature | - |
| Encapsulation/Housing | B,axial |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Supplier device packaging | - |
| Diode type | standard |
| Voltage DC reverse (Vr) (maximum) | 200 V |
| Current average rectification (Io) | 3A |
| Voltage at different If - forward (Vf) | 1.5 V @ 9 A |
| Reverse recovery time (trr) | 150 ns |
| Current - reverse leakage at different Vr | 1 µA @ 200 V |
| Capacitance at different Vr and F | - |
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